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高压串级延迟击穿开关在快前沿脉冲触发源中的应用
引用本文:孙铁平,韩娟娟,吴撼宇,黄涛,张国伟,丛培天,蒯斌,曾正中. 高压串级延迟击穿开关在快前沿脉冲触发源中的应用[J]. 强激光与粒子束, 2007, 19(10): 1744-1746
作者姓名:孙铁平  韩娟娟  吴撼宇  黄涛  张国伟  丛培天  蒯斌  曾正中
作者单位:西北核技术研究所,西安,710024;西北核技术研究所,西安,710024;西北核技术研究所,西安,710024;西北核技术研究所,西安,710024;西北核技术研究所,西安,710024;西北核技术研究所,西安,710024;西北核技术研究所,西安,710024;西北核技术研究所,西安,710024
摘    要:
 报导了一种高压串级延迟击穿(DBD)开关在快脉冲触发源中的应用,介绍了脉冲源的电路结构和工作原理,并将DBD开关成功应用于快前沿脉冲触发源,获得了明显的脉冲陡化效果。串级DBD开关的级数为15级,直流击穿电压45 kV,脉冲工作电压60 kV,脉冲前沿由95 ns减小到21.5 ns,脉冲宽度50 ns。

关 键 词:延迟击穿开关  脉冲触发源  脉冲变压器  脉冲陡化
文章编号:1001-4322(2007)10-1744-03
收稿时间:2007-02-07
修稿时间:2007-02-07

Series-connected high voltage delayed breakdown device switches applied to pulse trigger generator for fast risetime
SUN Tie-ping,HAN Juan-juan,WU Han-yu,HUANG Tao,ZHANG Guo-wei,CONG Pei-tian,KUAI Bin,ZENG Zheng-zhong. Series-connected high voltage delayed breakdown device switches applied to pulse trigger generator for fast risetime[J]. High Power Laser and Particle Beams, 2007, 19(10): 1744-1746
Authors:SUN Tie-ping  HAN Juan-juan  WU Han-yu  HUANG Tao  ZHANG Guo-wei  CONG Pei-tian  KUAI Bin  ZENG Zheng-zhong
Affiliation:Northwest Institute of Nuclear Technology, P.O.Box 69-10, Xi’an 710024, China
Abstract:
High power delayed breakdown device(DBD) switches containing fifteen series-connected semiconductor structures are introduced.The series-connected DBD switches have been applied to fast risetime trigger generator.The experimental results show that the input pulse is sharpened significantly by series-connected DBD switches.The series-connected DBD switches have a hold-off voltage 60 kV,and the risetime is reduced from 95 ns to 21.5 ns.The pulse width of output pulse is 50 ns.
Keywords:Delayed breakdown DBD switch  Trigger generator  Pulse transformer  Pulse sharpening
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