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Pulsed laser deposition of c * axis oriented pentacene films
Authors:K Itaka  T Hayakawa  J Yamaguchi  H Koinuma
Institution:(1) Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, 226-8503, Japan;(2) Japan Science and Technology Corporation, CREST, Yokohama, Japan
Abstract:Pulsed laser desorption and film deposition behaviors have been investigated on pentacene as an organic molecule primarily due to its applications in electronics. The laser desorption time-of-flight (LDTOF) mass spectrum exhibited a single parent peak when a pressed pentacene pellet was ablated by an N2 laser beam of its fluence lower than 100 mJ/cm2, indicating that pentacene could be evaporated without an appreciable photodecomposition by the pulsed laser beam. Ndthinsp:thinspYAG pulsed laser deposition of pentacene films was performed using such optimization parameters as laser fluences and wavelength (second, third and forth harmonic generations (SHG, THG, FHG)). The analyses with AFM, XRD and UV-Vis spectroscopy revealed the fabrication of c* axis oriented pentacene films on quartz, silicon, and CaF2 substrates by the SHG. The SHG films have a surface morphology superior to those of films deposited by THG and FHG. PACS 81.15.Fg; 81.05.Lg; 82.80.Rt
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