Nonlinear photoionization in the soft X-ray regime |
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| Authors: | M. Richter S. V. Bobashev A. A. Sorokin K. Tiedtke |
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| Affiliation: | (1) Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4L7, Canada;(2) Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu 400-8511, Japan;(3) Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario, L8S 4L7, Canada;(4) Brockhouse Institute for Materials Research, McMaster University, Hamilton, Ontario, L8S 4L7, Canada;(5) Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario, L8S 4L7, Canada;(6) Department of Physics and Astronomy, McMaster University, Hamilton, Ontario, L8S 4L7, Canada |
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| Abstract: | ![]()
We present the results of 800 and 400 nm wavelength, femtosecond laser pulse irradiation of a sample consisting of a metal film on thermally-grown oxide on silicon. On selected sites, cross-sectional transmission electron microscopy was performed to provide information on sub-surface changes not observable with surface scanning electron microscopy. A range of pulse energies in single-pulse irradiation exists for which the metal film was removed but the oxide was not appreciably thinned. For a sufficiently high pulse energy within this range, substantial defects were observed in the underlying silicon. Five infrared pulses of a relatively high fluence created significant defects, as well as producing polycrystalline material on top of the original oxide and metal. We discuss various factors which may play a role in the formation of the observed features. PACS 61.72.Ff; 68.37.Lp; 79.20.Ds |
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| Keywords: | PACS 32.80.Rm 32.80.Fb 06.30.-k |
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