Analysis of pπ → dπ bonding in halogen compounds of silicon, germanium and tin
Authors:
William L. Jolly
Affiliation:
Department of Chemistry, University of California, and the Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720. USA
Abstract:
Halogen lone pair ionization potentials for the main-group IV compounds MX4 and MH3Cl are corrected for the effects of potencial and relaxation energy using the corresponding halogen core binding energies. The corrected data indicate significant pπ --- dπ bonding in MX4 (for M = Si, Ge and Sn), significant repulsion between the lone pairs and CH3 group in CH3Cl. and little or no pπ --- dπ bonding in SiH3Cl and GeH3Cl.