Pulsed laser deposition of high temperature protonic films |
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| Institution: | 1. NASA-GRC, 21000 Brookpark Rd., Cleveland, OH 44135, USA;2. Ecole des Mines de Paris, BP 87, 91003 Evry Cedex, France;3. NASA-GRC/CWRU, 21000 Brookpark Rd., Cleveland, OH 44135, USA;1. Department of Materials Science and Engineering, Clemson University, Clemson, SC 29634, USA;2. Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, USA;3. Department of Mechanical Engineering, University of South Carolina, Columbia, SC 29208, USA;1. Union Research Center of Fuel Cell, China University of Mining & Technology, Beijing, 100083, China;2. State Key Laboratory of Power Systems, Department of Thermal Engineering, Tsinghua University, Beijing, 100084, China;3. School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive NW, Atlanta, GA 30332, USA;1. Division of Materials Science and Engineering, Boston University, Brookline, MA 02446, USA;2. Institute for Energy Systems, Technische Universität München, Boltzmannstrasse 15, 85748 Garching, Germany;3. Department of Mechanical Engineering, Boston University, Boston, MA 02215, USA;1. Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA;2. Scintillation Materials Research Center, University of Tennessee, Knoxville, TN 37996, USA;3. Siemens Medical Solutions Molecular Imaging, Knoxville, TN 37932, USA;1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, 210094, China;2. Electron Microscope Lab, Nanjing Forestry University, Nanjing, Jiangsu, 210037, China |
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| Abstract: | Pulsed laser deposition has been used to fabricate nanostructured BaCe0.85Y0.15O3?δ films. Protonic conduction of the fabricated BaCe0.85Y0.15O3?δ films was compared to the sintered BaCe0.85Y0.15O3?δ. Sintered samples and laser targets were prepared by sintering BaCe0.85Y0.15O3?δ powders derived by solid state synthesis. Films 1 to 8 μm thick were deposited by KrF excimer laser on porous Al2O3 substrates. Thin films were fabricated at deposition temperatures of 700 to 950 °C at O2 pressures up to 200 mTorr using laser pulse energy densities of 1.4–3 J/cm2. Fabricated films were characterized by X-ray diffraction, electron microscopy and electrical impedance spectroscopy. Single phase BaCe0.85Y0.15O3?δ films with a columnar growth morphology are observed with preferred crystal growth along the 100] or 001] direction. Results indicate 100] growth dependence upon laser pulse energy. Electrical conductivity of bulk samples produced by solid state sintering and thin film samples were measured over a temperature range of 100 to 900 °C. Electrical conduction behavior was dependent upon film deposition temperature. Maximum conductivity occurs at deposition temperature of 900 °C; the electrical conductivity exceeds the sintered specimen. All other deposited films exhibit a lower electrical conductivity than the sintered specimen. Activation energy for electrical conduction showed dependence upon deposition temperature, it varied from 115 to 54 kJ. Film microstructure was attributed to the difference in electrical conductivity of the BaCe0.85Y0.15O3?δ films. |
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