Extraordinary fast oxide ion conductivity in La1.61GeO5?δ thin film consisting of nano-size grain |
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| Institution: | 1. Agrifood Campus of International Excellence (CeiA3), Department of Chemistry and Physics, University of Almeria, European Union Reference Laboratory for Pesticide Residues in Fruit and Vegetables, 04120 Almería, Spain;2. National Agricultural Technology Institute (INTA), Concordia Agricultural Experimental Station, Argentina;1. Joint International Research Laboratory of Animal Health and Food Safety of Ministry of Education & Single Molecule Nanobiology Laboratory (Sinmolab), Nanjing Agricultural University, Nanjing, Jiangsu 210095, China;2. College of Veterinary Medicine, Hunan Agricultural University, Changsha, Hunan 410128, China;3. School of Manufacture Science and Engineering, Key Laboratory of Testing Technology for Manufacturing Process, Ministry of Education, Southwest University of Science and Technology, Mianyang, Sichuan 621010, China;4. Advanced Institute of Micro-Nano Intelligent Sensing (AIMNIS), School of Electronic Information Engineering, Xi’an Technological University, Xi’an, Shaanxi 710032, China;5. OptiX+ Laboratory, School of Electronics and Information Engineering, Wuxi University, Wuxi, Jiangsu 214105, China;1. School of Public Health, Hebei Medical University, Shijiazhuang, 050017, China;2. State Key Laboratory of Toxicology and Medical Countermeasures, and Laboratory of Toxicant Analysis, Institute of Pharmacology and Toxicology, Academy of Military Medical Sciences, Beijing, 100850, China;3. State Key Laboratory of Toxicology and Medical Countermeasures, and Beijing Institute of Pharmacology and Toxicology, Beijing, 100850, China;4. State Key Laboratory of Pathogen and Biosecurity, Beijing Institute of Microbiology and Epidemiology, Beijing, 100071, China |
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| Abstract: | Thin films of La1.61GeO5?δ, a new oxide ionic conductor, were fabricated on dense polycrystalline Al2O3 substrates by a pulsed laser deposition (PLD) method and the effect of the film thickness on the oxide ionic conductivity was investigated on the nanoscale. The deposition parameters were optimized to obtain La1.61GeO5?δ thin films with stoichiometric composition. Annealing was found necessary to get crystalline La1.61GeO5?δ thin films. It was also found that the annealed La1.61GeO5?δ film exhibited extraordinarily high oxide ionic conductivity. Due to the nano-size effects, the oxide ion conductivity of La1.61GeO5?δ thin films increased with the decreasing thickness as compared to that in bulk La1.61GeO5?δ. In particular, the improvement in conductivity of the film at low temperature was significant .The electrical conductivity of the La1.61GeO5?δ film with a thickness of 373 nm is as high as 0.05 S cm? 1 (log(σ/S cm? 1) = ? 1.3) at 573 K. |
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