High-temperature proton conductivity in acceptor-doped LaNbO4 |
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| Affiliation: | 1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, PR China;2. School of Materials Science and Engineering, Qilu University of Technology, Jinan 250353, PR China;3. Shenzhen Research Institute of Shandong University, Shenzhen 518057, PR China;1. School of Electronical and Information Engineering, Tianjin University, Tianjin 300072, PR China;2. Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072, PR China;1. School of Physics and Electronics, Shandong Normal University, Jinan 250358, China;2. Department of Physics, University of Science and Technology of China, Hefei, 230026, China;1. Institute of Energy and Climate Research IEK-1, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany;2. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons ER-C, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany;3. Central Facility for Electron Microscopy GFE, RWTH Aachen University, 52074 Aachen, Germany;4. Instituto de Tecnología Química, Universidad Politécnica de Valencia-Consejo Superior de Investigaciones Científicas, Av. Naranjos s/n, E-46022 Valencia, Spain;5. Institute of Energy and Climate Research IEK-2, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany |
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| Abstract: | ![]()
The conductivity of acceptor-doped LaNbO4 has been investigated in the temperature range 300 to 1200 °C as a function of the oxygen pressure and water vapor pressure by means of impedance spectroscopy and EMF measurements. The conductivity is predominantly ionic below 800 °C in air and for higher temperatures under reducing conditions. Protons are the major ionic charge carrier in the presence of water vapor. A maximum in proton conductivity of ∼ 0.001 S/cm was obtained at 950 °C in atmospheres containing ca 2% H2O. At high temperatures (> 1000 °C) under oxidizing conditions, electron hole conduction prevails. The conductivity has been modeled assuming that oxygen vacancies and protons compensate the acceptor doping. Transport coefficients describing mobility of defects and thermodynamic constants for the incorporation of protons have been derived. |
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