X‐ray excited optical luminescence from crystalline silicon |
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| Authors: | Paul Gundel Gema Martinez‐Criado Martin C. Schubert Juan Angel Sans Wolfram Kwapil Wilhelm Warta Eicke R. Weber |
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| Affiliation: | 1. ESRF, 6 rue Jules Horowitz, BP 220, 38043 Grenoble Cedex, France;2. Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstr. 2, 79110 Freiburg, Germany |
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| Abstract: | Synchrotron based X‐ray excited optical luminescence (XEOL) has been measured with many direct bandgap semiconductors. We present XEOL measurements on crystalline silicon (Si), obtained despite of its indirect bandgap and the consequently low luminescence efficiency. Spectra of monocrystalline and multicrystalline (mc) Si at room temperature are compared to theoretical spectra. A possible application in the synchrotron‐based research on mc‐Si is exemplified by combining XEOL, X‐ray fluorescence (XRF) spectroscopy, photoluminescence (PL) spectroscopy, and microscope images of grain boundaries. This approach can be utilized to investigate the recombination activity of metal precipitates, to analyze areas of different lifetimes on mc‐Si samples and to correlate additional material parameters to XRF measurements. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | 72.20.Jv 78.55.Ap 78.70.En 84.60.Jt |
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