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单层SiO2物理膜与化学膜激光损伤机理的对比研究
引用本文:陈习权,祖小涛,郑万国,蒋晓东,吕海兵,任 寰,张艳珍,刘春明.单层SiO2物理膜与化学膜激光损伤机理的对比研究[J].物理学报,2006,55(3):1201-1206.
作者姓名:陈习权  祖小涛  郑万国  蒋晓东  吕海兵  任 寰  张艳珍  刘春明
作者单位:(1)电子科技大学应用物理系,成都 610054; (2)电子科技大学应用物理系,成都 610054;中物院激光聚变研究中心,绵阳 621900; (3)中物院激光聚变研究中心,绵阳 621900
基金项目:国家自然科学基金重点项目(批准号:2013304),中物院预研基金(批准号:421020607),教育部博士点基金和教育部新世纪优秀人才计划资助的课题.
摘    要:采用离子束溅射沉积技术和溶胶-凝胶技术在K9基片上镀制了厚度相近的SiO2单层介质膜,用表面热透镜技术对两类膜层分别进行了热吸收及实时动态热畸变实验测试,结合散射光阈值测试及实验前后膜层的显微观测,对相同基底、相同膜层材料而采用不同方法镀制的光学膜层,发现化学膜的强激光损伤阈值远高于相应物理膜;从热力学响应及膜层特性差异的角度揭示了化学膜层的强激光损伤阈值远高于相应物理膜层的微观机理,即物理膜具有高吸收下的致密膜层快传导的基底热冲击效应,而化学膜则有低吸收下的疏松空隙填充慢传导的延缓效应,大量的实验数据及现象都证实了这一结论. 关键词: 强激光辐照损伤 损伤形貌 热冲击 热吸收

关 键 词:强激光辐照损伤  损伤形貌  热冲击  热吸收
收稿时间:07 10 2005 12:00AM
修稿时间:2005-07-102005-07-25

Experimental research of laser-induced damage mechanism of the sol-gel SiO2 and IBSD SiO2 thin films
Chen Xi-Quan,Zu Xiao-Tao,Zheng Wan-Guo,Jiang Xiao-Dong,Lü Hai-Bing,Ren Huan,Zhang Yan-Zhen,Liu Chun-Ming.Experimental research of laser-induced damage mechanism of the sol-gel SiO2 and IBSD SiO2 thin films[J].Acta Physica Sinica,2006,55(3):1201-1206.
Authors:Chen Xi-Quan  Zu Xiao-Tao  Zheng Wan-Guo  Jiang Xiao-Dong  Lü Hai-Bing  Ren Huan  Zhang Yan-Zhen  Liu Chun-Ming
Institution:1. Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China ; 2. Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
Abstract:This paper investigates the high-power laser-induced damage of two types of single-layer SiO2 thin films on K9 substrate, which are respectively deposited by IBSD technique and sol-gel technique, and have the same substrate parameters and the same film thickness. They were tested by surface thermal lensing technique to obtain the thermal absorbance and the dynamic response. The results show that the laser-initiated damage threshold of Sol-Gel SiO2 thin film is far higher than that of IBSD SiO2 thin film. And combined with threshold measurement and the microscopic observation, this paper well explains in detail the threshold difference between Sol-Gel SiO2 and IBSD SiO2 thin films.
Keywords:high-power laser radiation damage    damage morphologies    thermal shock    thermal absorbance
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