p-type porous-silicon transducer for cation detection: effect of the porosity, pore morphology, temperature and ion valency on the sensor response and generalisation of the Nernst equation

This paper shows the possibility of using oxidised porous silicon (PS) as a transducer material for ion-sensor applications. It aims to study the over-Nernstian behaviour of the porous electrodes towards the concentration of cations in contact. The dependence of the sensitivity on the porosity of the samples prepared from highly doped substrates has been studied. Maximal values of over-Nernstian sensitivities around 240 mV/pNa and ∼92 mV/pCu, corresponding to a PS-layer porosity of about 65%, obtained respectively from p⁻ and p⁺ silicon substrates, have been registered. Furthermore, the effect of the porous nanostructure morphology has been studied, by preparing PS samples from weakly doped wafers. The porous-silicon-based sensor behaviour for different PS-layer thicknesses has also been experimentally investigated. According to these results, a physical model has been proposed to explain the mechanisms which govern the charge-carrier transfer from one side to the other of the functionalised oxide layer, and leads to the over-Nernstian adsorption of the cationic species at the electrolyte/SiO₂ interface. Afterwards, the Nernst relation has been generalised accordingly, on one hand, to the previous experimental results, and on the other hand, to the results obtained about the ion-valency and the electrolyte-temperature effects on the sensor responses. Received: 15 December 2000 / Accepted: 18 December 2000 / Published online: 23 March 2001