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Measurement of low-frequency noise in tunnel diodes
Authors:Yu. A. Vasil'ev  V. A. Shcheglov
Abstract:Conclusions Our studies have revealed that the spectral density of low-frequency current fluctuations in GaAs tunnel diodes can be described by the relation Wi(u, F)=f2 (u)mFagr, where the nonlinear function f2(u) is not proportional to the rms of excess diode current. The flicker nature of the current noise in tunnel diodes derives from conductance fluctuations on the p-n junction, which occur in tunnel diodes as well as in low-noise transistors at frequencies ranging from near zero to a few kiloheriz and produce noise of almost the same absolute intensty in both kinds of devices.Leningrad Polytechnic Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 20, No. 5, pp. 777–784, May, 1977.
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