InAlAs浓度对In_(0.83)Al_(0.17)As/In_(0.83)Ga_(0.17)As红外探测器特性的影响北大核心CSCD

红外探测器的性能受内部结构各层掺杂浓度的影响,而倍增层掺杂浓度会明显改变器件的性能。为了降低暗电流,提高器件性能,采用三元化合物In_(0.83)Al_(0.17)As作为倍增层材料,借助仿真软件Silvaco详细研究了In_(0.83)Al_(0.17)As/In_(0.83)Ga_(0.17)As红外探测器的倍增层掺杂浓度对器件电场强度、电流特性和光响应度的影响规律。结果表明,随着倍增层掺杂浓度的增加,器件倍增层内的电场强度峰值增加,同时,器件的暗电流与光响应度减小。进一步研究发现,当倍增层掺杂浓度为2×10^(16) cm^(?3)时,器件获得最优性能,暗电流密度为0.62144 A/cm^(2),在波长为1.5μm时,光响应度和比探测率分别为0.9544 A/W和1.9475×10^(9) cmHz^(1/2)W^(?1)。

Influence of InAlAs concentration on In0.83Al0.17As/In0.83Ga0.17As infrared detector characteristics

The performance of infrared detector is affected by the doping concentration of each layer of internal structure, and the doping concentration of multiplication layer will significantly change the performance of the device. In order to reduce the dark current and improve the performance of the device, the ternary compound In_0.83Al_0.17As was used as the multiplication layer material, and with the help of simulation software Silvaco, the effects of the doping concentration in the multiplication layer of In_0.83Al_0.17As/ In_0.83Ga_0.17As infrared detector on the electric field intensity, current characteristics and optical responsivity of the device were studied in detail. The results show that with the increase of doping concentration in the multiplication layer, the peak value of electric field intensity in the multiplication layer increases, and the dark current and optical responsivity of the device decreases respectively. It is further found that when the doping concentration in the multiplication layer is 2×1016 cm?3, the device obtains the optimal performance, the dark current density is 0.621 44 A/cm2, and when the wavelength is 1.5 μm, the optical responsivity and specific detectivity are 0.954 4 A/W and 1.947 5×109 cmHz1/2W?1, respectively.