Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films |
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| Authors: | G Teowee J M Boulton C D Baertlein R K Wade D R Uhlmann |
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| Institution: | (1) Donnelly Corp., 4545 E. Ft. Lowell Rd., 85712 Tucson, AZ;(2) Arizona Materials Laboratories, Department of Materials Science and Engineering, University of Arizona, 85712 Tucson, AZ |
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| Abstract: | A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model. |
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| Keywords: | thin films lead zirconate lead titanate ferroelectric |
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