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Kondo scattering and properties of TmSe in the infrared region
Authors:B P Gorshunov  A S Prokhorov  I E Spektor  A A Volkov  M Dressel  M Dumm  T Matsumura
Institution:1.Prokhorov General Physics Institute,Russian Academy of Sciences,Moscow,Russia;2.Physikalisches Institut 1,Universit?t Stuttgart,Stuttgart,Germany;3.Department of Physics,Tohoku University,Japan
Abstract:The conductivity and permittivity spectra of the intermediate-valence semiconductor TmSe have been measured by terahertz and infrared spectroscopy in a frequency range of 10–104 cm?1 and a temperature range of 5–300 K. At low temperatures (5 K < T < 100 K), the spectra contain a gap Δ ≈ 2.5 meV, whose appearance is considered to be related to conduction-electron localization at local magnetic moments. At high temperatures (100 K < T < 300 K), the dielectric response is specified by two electronic components: “ light” conduction electrons and “heavy” hybridized f-d states. The microscopic parameters of both components, such as the concentration, mobility, effective mass, relaxation frequency, and the plasma frequency, are determined.
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