光电耦合器的反应堆中子辐射效应

选择3种典型光电耦合器开展了反应堆中子辐照实验，中子注量为3×1011~5×1012cm-2时，位移效应导致电流传输比下降，饱和压降提高。发光器件相同,探测器为Si PIN光电二极管的光电耦合器比探测器为Si NPN光敏晶体管的光电耦合器的初始电流传输比要小，但其抗位移损伤能力更强。探测器均为Si NPN光敏晶体管，发光器件为异质结LED要比硅两性掺杂LED的光电耦合器的电流传输比抗位移损伤能力提高2个量级；以光敏晶体管为探测器的光电耦合器，在较大的正向电流和输出负载电阻条件下工作可提高抗辐射水平。此外，光电耦合器的位移损伤存在加电退火效应。

18.2 nm Schwarzschild microscope for plasma diagnosis

A Schwarzschild microscope at 18.2 nm for ultra-fast laser produced plasma diagnosis is developed. According to the requirements of plasma diagnosis, the microscope is designed for numerical aperture of 0.1 and magnification of 10. It is found that spatial resolution of the designed objective achieves 1 250 lp/mm within the field of ±1 mm with respect to the calculation of modular transfer function. Based on the working wavelength and incidence angle of light, the Mo/Si multilayer film with period of 9.509 nm and layer number of 30 is designed and the coatings are deposited with magnetron sputtering. The reflectivity of the developed optical elements at 18.2 nm is about 30%. In order to demonstrate the resolution of microscope, a 24 lp/mm copper grid backlit by laser produced plasma is im