Role of growth temperature on nanostructure and field emission properties of PLD thin carbon films

Thin carbon films have been deposited in vacuum (∼10⁻⁴ Pa) on Si substrates by pulsed laser ablation of a graphite target using a Nd:YAG laser operating in the near infrared region (λ=1064 nm). The samples have been deposited at different substrate temperatures (T _sub) ranging from room temperature (RT) to 800°C. X-ray diffraction analysis established the progressive formation of nanosized graphene structures as T _sub increased. In fact, film structure evolves from almost amorphous to nanostructured phase characterized by graphene layers oriented perpendicularly to the film plane. The film density, evaluated by X-ray reflectivity measurements, is strongly affected by T _sub. At RT the film density is similar to the graphite one, while it decreases at higher T _sub. The electrical properties of the samples have been characterized by field emission measurements. The parameters describing the emitter properties (threshold field E _th and field enhancement factor β) have been evaluated using variable anode-to-cathode distance method. Samples deposited at low T _sub have shown the best emission properties, presenting lower E _th and larger β values than those deposited at higher T _sub. This is mainly attributed to the sensible density variation, which is in competition with the slighter augment of mean nanoparticle size.