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Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability |
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| Authors: | WANG Hong-Juan HAN Gen-Quan LIU yan YAN Jing ZHANG Chun-Fu ZHANG Jin-Cheng HAO Yue |
| Affiliation: | [1]Key Laboratory of Optoelectronic Technology and Systems of the Ministry of Education, College of Optoelectronie Engineering, Chongqing University, Chongqing 400044 [2]Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi＇an 710071 |
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