Variation of spark-processing parameters on the photoluminescence properties of spark-processed silicon |
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Authors: | M.E Stora R.E Hummel |
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Affiliation: | Department of Materials Science and Engineering, University of Florida, 216 Rhines Hall, P.O. Box 116400, Gainesville, FL 32611-6400, USA |
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Abstract: | Electrical and physical parameters, which influence the photoluminescence (PL) properties of spark-processed silicon (sp-Si), were systematically varied in order to obtain optimal PL emission. Among these parameters are the average spark current, the pulse width of the spark events, the frequency of the pulses, the processing time, the electrode diameter, the distance between the electrodes, the spark-processing environment, and the gas ambient pressure. It was found that for optimal PL emission the processing current needs to be between 20 and 40 mA, and the pulse frequency of the sparks between 10 and 15 kHz. Further, the N2/O2 ratio of the processing environment needs to be about 7:3 and the ambient gas pressure and the processing time as large as feasible. The conditions that are favorable for green PL are a small pulse width, a small counter electrode diameter, a small gap between electrodes, a relatively large nitrogen concentration in the processing chamber, and a comparatively large spark frequency. In the opposite cases, a UV/blue PL is predominantly observed. The results are discussed in terms of various thermal effects on the resulting molecules or defects, which are believed to be important for the PL emission. |
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Keywords: | A. Optical materials A. Semiconductors A. Nanostructures D. Luminescence D. Optical properties |
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