Magnetic-field-induced valence transition in EuNi2(Si1−x
Gex)2 in fields up to 500 T |
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Authors: | V V Platonov O M Tatsenko V D Selemir M Shiga |
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Institution: | (1) All-Russia Scientific-Research Institute of Experimental Physics, Sarov, Nizhegorodsk oblast, 607188, Russia;(2) Kyoto University, Sakyo-ku, Kyoto 606-01, Japan |
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Abstract: | The critical fields of the valence transition induced by a magnetic field in the EuNi2(Si1?x Gex)2 (x=0.5–0.75) compound in an intermediate valence state are measured. The magnetic-field-induced valence transition is observed in the low-concentration range down to x=0.5. It is demonstrated that the critical field increases linearly with a decrease in the germanium concentration. |
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