| Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory |
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| 引用本文： | 徐成 刘波 宋志棠 封松林 陈邦明. Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory[J]. 中国物理快报, 2005, 22(11): 2929-2932 |
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| 作者姓名： | 徐成 刘波 宋志棠 封松林 陈邦明 |
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| 作者单位： | [1]Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [3]The Graduate School of the Chinese Academy of Sciences, Beijing 100080 [4]Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| 基金项目： | Supported by the National High Technology Development Programme of China under Grant Nos 2003AA302720 and 2004AA302G20, the Shanghai Nanotechnology Promotion Center （0352nm016, 0452nm012）, the Chinese Academy of Sciences, and the Science and Technology Council of Shanghai （04DZ05612, 04ZR14154, AM0414, 03dz11009, 04JC14080）. |
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| 摘 要： | Sn-doped Ge2Sb2Te5 thin films deposited on Si（100）/SiO2 substrates by rf magnetron sputtering are investigated by a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallization temperatures of the 3.58 at.%, 6.92 at.% and 10.04 at.% Sn-doped Ge2Sb2Te5 thin films have decreases of 5.3, 6.1 and 0.9℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystalline phase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2Te5 thin films increases about 2-10 times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. In addition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2Te5 thin films in the crystalline state has been observed, which can play an important role in minimizing resistance difference for the phase-change memory cell element arrays.
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| 关 键 词： | Ge2Sb2Te5 薄膜 杂质 沉淀物 电子喷射 电阻测量 |
| 收稿时间： | 2005-04-29 |
| 修稿时间： | 2005-04-29 |
Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory |
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| XU Cheng, LIU Bo, SONG Zhi-Wang, FENG Song-Lin, CHEN Bomy. Characteristics of Sn-Doped Ge2Sb2Te5 Films Used for Phase-Change Memory[J]. Chinese Physics Letters, 2005, 22(11): 2929-2932 |
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| Authors: | XU Cheng LIU Bo SONG Zhi-Wang FENG Song-Lin CHEN Bomy |
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