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Carrier Transport Behaviour of Molecular Doped Poly(N—Vinylcabozole)in Polymer Light—Emitting Diodes
引用本文:陈晓红,徐征,等.Carrier Transport Behaviour of Molecular Doped Poly(N—Vinylcabozole)in Polymer Light—Emitting Diodes[J].中国物理快报,2002,19(11):1697-1699.
作者姓名:陈晓红  徐征
作者单位:[1]InstituteofOptoelectronicTechnology,NorthernJiaotongUniversity,Beijing100044;ChangchunInstituteofOpticsandFineMechanismandPhysics,ChineseAcademyofSciences,Changchun130021;Institut [2]InstituteofOptoelec,NorthernJiaotongUniversity,Beijing100044;ChangchunInstituteofOpticsandFineMechanismandPhysics,ChineseAcademyofSciences,Changchun130021;Institut
摘    要:Single-layer polymer light-emitting diodes are prepared from blends of poly(N-vinylcarbozole)(PVK) doped with tris(8-hydroxy-quinoline)aluminium(Alq3) of 2wt%(sample a)and 0.2wt%(sample b).The onset of PVK transient electroluminescence(EL) is delayed with respect to that of Alq3 in sample a under pulsed excitation,while the EL onsets of Alq3 and PVK in sample b are simultaneous.The total carrier mobility of the Alq3-rich regions in sample a is larger than that of the PVK-rich regions.However,the total carrier mobility is homogeneous in sample b.the phase image of atomic force microscopy and photoluminescence spectra of samples a and b indicate that the separated phase of samples a and b exists in the PVK-rich and Alq3-rich regions.The variance of the doping concentration and separated phase in blends results in the different carrier transport mobility of Alq3-rich and PVK-rich regions.

关 键 词:聚合物发光二极管  大分子掺杂  载流子迁移行为
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