| Ⅱ—Ⅵ族稀磁半导体Cd1—xMnxTe／Cd1—yMnyTe超晶格的光调制反 … |
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| 引用本文： | 李海涛,凌震.Ⅱ—Ⅵ族稀磁半导体Cd1—xMnxTe／Cd1—yMnyTe超晶格的光调制反 …[J].光谱学与光谱分析,1998,18(2):129-134. |
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| 作者姓名： | 李海涛 凌震 |
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| 摘 要： | 本文报道用分子束外延技术生长的Ｃｄ１－ｘＭｎｘＴｅ／Ｃｄ１－ｙＭｎｙＴｅ超晶格样品在８０Ｋ下的光调制反射谱实验结果，观测到１１Ｈ，２２Ｈ，３３Ｈ和１１Ｌ等激子跃迁结构。计及晶格失配导致的应力效应，对子能级结构进行了理论计算。
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| 关 键 词： | 稀磁半导体 超晶格 光调制反射谱 MBE DMS |
Study of photoreflectance in Cd1-xMnxTe/Cd1-yMnyTe superlattices of II - VI diluted magnetic semiconductors] |
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| H Li,X Li,X Chen,J Liu,C Chen,X Wang,Y Han,C Lin,Z Ling,X Wang.Study of photoreflectance in Cd1-xMnxTe/Cd1-yMnyTe superlattices of II - VI diluted magnetic semiconductors][J].Spectroscopy and Spectral Analysis,1998,18(2):129-134. |
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| Authors: | H Li X Li X Chen J Liu C Chen X Wang Y Han C Lin Z Ling X Wang |
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| Institution: | Department of Physics, Peking University, Beijing. |
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| Abstract: | The observation of photoreflectance spectra of Cd1-xMnxTe/Cd1-yMnyTe superlattices was carried out at temperature T = 80K. The samples were grown by molecular beam epitaxy (MBE) technique. The heavy-and light-hole excitonic transition structures 11H, 22H, 33H and 11L were observed and the theoretical calculations, including the strain effects, were performed. By comparison, both agree well. |
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