Implant redistribution in high-dose ion implanted and annealed silicon |
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| Authors: | C E Christodoulides G Carter J S Williams |
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| Institution: | 1. Department of Electrical Engineering , University of Salford , Salford, M5 4WT, England;2. Department of Communication and Electronic Engineering , Royal Melbourne Institute of Technology , Melbourne, Australia |
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| Abstract: | Abstract Diffusion constants of helium in gold, silver and aluminium are determined from thermal desorption experiments, giving: Au: D 0 = 10?1.0 cm2/sec, ΔH = 1.70 eV Ag: D 0 = 10?1.2 cm2/sec, ΔH = 1.50 eV Al: D 0 = 10+0.1 cm2/sec, ΔH = 1.35 eV The results are compared to self-diffusion and to the diffusion of other light elements in metals. Possible diffusion mechanisms are discussed. |
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| Keywords: | Surface segregation Bulk diffusion Vacancy formation energy Diffusion Segregation Cu Sb |
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