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Computer studies of boron ion channeling in silicon single crystals |
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| Authors: | V. A. Eltekov D. S. Karpuzov YU. V. Martynenko E. A. Rubakha V. A. Simonov V. E. Yurasova |
| Affiliation: | Physical Department , Moscow State University , Moscow, 117234, U.S.S.R. |
| Abstract: | The motion of 200 keV B ions in the [111] direction in a silicon single crystal has been investigated using a computer simulation method. Profiles of the depth distribution of implanted ions for both an ideal crystal and a crystal with thermal vibrations have been obtained. A study of the defect distribution has been carried out. |
| Keywords: | Ce3+ luminescence Stokes shift Crystal field splitting |