Some studies of BF2 and B+F implanted Silicon |
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| Authors: | G. S. Virdi Jagdish Lal B. C. Pathak W. S. Khokle |
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| Affiliation: | 1. Semiconductor Devices Area , Central Electronics Engineering Research Institute , Pilani , 333031 , (Raj.) , India;2. Semiconductor Devices Area , Central Electronics Engineering Research Institute , Pilani , 333031 , (Raj.) , India;3. Department of Physics , I.I.T., Kharagpur , Kharagpur , India |
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| Abstract: | ![]()
Ion-implanted shallow junctions have been investigated using BE2 (molecular ions) by the anodic oxidation method coupled with a four-point probe technique. BF2 ions were implanted through screen oxide at doses of 3–5 × 1015 ions/cm2 and energies of 25 and 45 keV which is equivalent to 5.6 keV and 10 keV of boron ions. The effect of energy, dose and annealing temperature on shallow junctions is presented in this paper. The shallow junctions in the range of 0.19 μm to 0.47 μm were fabricated. The effect of fluorine on sheet resistivity of boron implanted silicon at various doses, treated with two-step and three-step annealing, is also presented for comparison in the paper. |
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| Keywords: | Thermoluminescence photoluminescence Eu3+ Eu2+ Sulphate compounds. |
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