Metallic alloy precipitates in high dose indium implanted MgO |
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Authors: | A Perez M Treilleux L Fritsch G Marest |
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Institution: | 1. Département de Physique des Matériaux , Université Claude Bernard , Lyon I, 69622, Villeurbanne Cédex, France;2. Institut de Physique Nucléate et IN , Université Claude Bernard , Lyon I, 69622, Villeurbanne Cédex, France |
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Abstract: | Abstract MgO implanted at room temperature with 150keV In+ ions and doses ranging from 1015 to 1017 ions cm?2 was studied by optical absorption and transmission electron microscopy (TEM). Creation of defects in the anionic sublattice (F-, F+-, F2-centers) and in the cationic sublattice (V?-centers) are observed. Subsequent annealings of the implanted crystals have shown different behaviours depending on the implanted dose. For medium dose (2 × 1016 ions cm?2), the formation of In3+ species seems to be the preponderant phenomenon. At higher dose (8 × 1016 ions cm?2), metallic precipitates are formed between 400 and 700°C. The identification of these precipitates has been achieved using TEM: they are formed of a metallic alloy Mg3In with a hexagonal structure and their orientation relationship with respect to the MgO matrix is: (0001)Mg3In//(111)Mgo and 1120]Mg3In// l10]MgO. |
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Keywords: | Key words Cr3+ centers stoichiometric (VTE) LiNbO3 R-line absorption and emission defect lattice sites |
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