Energy loss of 1000 keV electrons in thin silicon crystals as measured by high voltage electron microscopy

Abstract

Energy loss spectra of 1000 keV electrons transmitted by 111]-: riented thin silicon crystals were observed by an energy analyzer attached to the HVEM. The crystals were set to the systematic 220 Bragg reflection. Measurements were made for crystal thickness ranging from 1000 to 10,000 Å, which were determined by observations of pendellösung fringes.

Results were analyzed with Landau's transport equation, giving the : onclusion that the loss probability, which is the reciprocal of the mean free path, is 0.52 ± 0.02 × 10^?3 A^?1 for plasmon excitation and 1.50 ± 0.02 × 10^?3 A^?1 for L-electron excitation.