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ZnO:Mn as a member of II-VI:Mn family |
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| Authors: | E Chikoidze Y Dumont HJ von Bardeleben J Gleize F Jomard E Rzepka G Berrerar D Ferrand O Gorochov |
| Institution: | 1. Groupe d’étude de la Matière Condensée, CNRS-Université de Versailles, 1, Pl. Aristide Briand, 92195, Meudon Cedex, France 2. Groupe de Physique des Solides de l’Ecole Normale Supérieure, Université de Paris VII, Tour 23, 2 place Jussieu, 75251, Paris Cedex 05, France 3. Laboratoire de Physique des Milieux Denses, Université de Metz, 1, Bd. Dominique-Fran?ois Arago, 57078, Metz Cedex 3, France 4. CNRS-CEA-UJF Joint Group, Laboratoire de Spectrométrie Physique, Université J. Fourier, BP 87, 38402, Saint Martin d’Hères, France |
| Abstract: | ZnO:Mn thin films are grown by the metal organic chemical vapor deposition technique. Mn (x) varies in the 0<x<0.44 range. Vegard’s law has been verified for the lattice parameters. Electron paramagnetic resonance (EPR) measurements prove the substitutional incorporation of Mn2+ on zinc sites. The behavior of the EPR line width regarding temperature is discussed. All ZnO:Mn layers show antiferromagnetic interaction and a J1/kB=-15 K effective exchange constant. The optical band gap of ZnO:Mn increases with the manganese concentration. Raman spectroscopy reveals a Mn-related scattering band. PACS 71.55.Gs; 75.50.Pp; 61.10.Nz; 76.30.Fc; 75.30.Et; 78.40.-q |
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