Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes |
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| Institution: | 1. ONERA, Chemin de la Hunière, 91761 Palaiseau, France;2. Univ. Montpellier, IES, UMR 5214, F-34000 Montpellier, France;3. CNRS, IES, UMR 5214, F-34000 Montpellier, France;1. ONERA, Chemin de la Hunière, F-91761 Palaiseau, France;2. IRnova AB, Electrum 236, SE-164 40 Kista, Sweden;3. IES, Univ. Montpellier, CNRS, F-34000 Montpellier, France;1. Earth Observation Research Center (EORC), Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki 305-0035, Japan;2. College of Science and Engineering, Ritsumeikan University, 1-1-1, Noji-higashi, Kusatsu, Shiga 525-8577, Japan;3. Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1, Taya-cho, Sakae-ku, Yokohama, Kanagawa 244-8588, Japan |
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| Abstract: | In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determine the SL structure showing optimum radiometric performances: same InAs-rich SL structure with different active zone thicknesses (from 0.5 μm to 4 μm) and different active zone doping (n-type versus p-type), same 1 μm thick p-type active zone doping with different SL designs (InAs-rich versus GaSb-rich and symmetric SL structures). Best result was obtained for the p-type doped InAs-rich SL photodiode, with a 4 μm active zone thickness, showing a QE that reaches 61% at λ = 2 μm and 0 V bias voltage. |
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| Keywords: | InAs/GaSb superlattice Photodiode Quantum efficiency |
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