An X-ray topographic method for identifying the active slip systems in cubic crystals |
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| Authors: | G. F. Kuznetsov |
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| Affiliation: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow oblast, 141120, Russia |
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| Abstract: | An original technique based on the geometric characteristics of dislocations in planar pileups is suggested which allows the estimation of the local thermoelastic stresses and analysis of the influence of a number of growth parameters on the formation of dislocations in A III B V semiconductor crystals. |
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