Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy |
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| Authors: | Trevor E. Buehl,James M. LeBeau,Susanne Stemmer,Michael A. Scarpulla,Christopher J. Palmstrø m,Arthur C. Gossard |
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| Affiliation: | 1. Materials Department, University of California, Santa Barbara, CA 93106, USA;2. Materials Science and Engineering Department, University of Utah, Salt Lake City, UT 84112, USA;3. Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, USA |
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| Abstract: | ![]()
The low solubility of Er in GaAs results in the formation of ErAs nanostructures when GaAs is grown with 5–6 at% Er/Ga ratio by molecular beam epitaxy on GaAs surfaces. For growth on the (4 1 1)A GaAs surface, cross-sectional scanning transmission electron microscopy images show the presence of ErAs nanorods embedded in a GaAs matrix extending along the [2 1 1] direction with a spacing of roughly 7 nm and a diameter of roughly 2 nm. Growth on the GaAs (4 1 1)B surface resulted in only nanoparticle formation. Variation of the polarized optical absorption with in-plane polarization angle is consistent with coupling to surface plasmon resonances of the semimetallic nanostructures. |
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| Keywords: | A3: Molecular beam epitaxy B1: Erbium arsenide B1: Nanorods B2: Semimetallic erbium arsenide B2: Semiconducting gallium arsenide |
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