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Growth of A-plane GaN on (0 1 0) LiGaO2 by plasma-assisted MBE
Authors:R. Schuber  M.M.C. Chou  P. Vincze  Th. Schimmel  D.M. Schaadt
Affiliation:1. Institute for Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany;2. DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany;3. Department of Materials Science and Opto-electronic Engineering, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, ROC;4. Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), 763131 Karlsruhe, Germany
Abstract:
Keywords:A3. Molecular beam epitaxy   B1. GaN   B1. LiGaO2   B1. Non-polar nitrides
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