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场效应管药物传感器
引用本文:黄西朝,王君龙,焦更生.场效应管药物传感器[J].分析试验室,2006,25(6):56-58.
作者姓名:黄西朝  王君龙  焦更生
作者单位:1. 渭南师范学院传感器研究所,渭南,714000
2. 渭南师范学院传感器研究所,渭南,714000;西北工业大学理学院应用化学系,西安,710072
摘    要:将场效应管与药物敏感膜结合,以硅钨酸或四苯硼钠未转型的定域体试剂为电活性物质的药物传感器.该传感器制作简单,线性范围宽于或检测下限低于文献值.并对器件的影响因素进行了详尽的讨论.

关 键 词:离子敏感场效应晶体管  土霉素  四环素  维生素B6  四苯硼钠  硅钨酸
文章编号:1000-0720(2006)06-056-03
收稿时间:07 27 2005 12:00AM
修稿时间:2005-07-272005-10-31

A drug sensor based on field effect transistor
HUANG Xi-chao,WANG Jun-long,JIAO Geng-sheng.A drug sensor based on field effect transistor[J].Chinese Journal of Analysis Laboratory,2006,25(6):56-58.
Authors:HUANG Xi-chao  WANG Jun-long  JIAO Geng-sheng
Abstract:A drug sensor was silicotungstic acid or sodium made by combination of a field effect transistor and a drug sensitive membrane, with tetraphenylboron as active substance. Such sensors were easier to fabricate and exhibited a broader linear range or a lower detection limit than that in the literature. A detailed discussion was also done as to how the devices affect the results.
Keywords:Ion sensitive field effect transistor(ISFE)  Oxytetracycline  Tetracycline  Vitamin B_6  Sodium tetraphenylboron  Silicotungstic acid
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