The charge neutrality level in w-AlxGa1−x N solid solutions

Energy positions of the charge electroneutrality level (CNL) and neutral vacancy levels of nitrogen are calculated for w-GaN, w-AlN, and w-Al _x Ga _1−x N versus solid-solution composition x in the virtual-crystal approximation. It is shown that within the whole range of the w-Al _x Ga _1−x N compositions, the CNL is located in the upper half of the band gap, which results in the n-type conductivity of this material upon exposure to high-energy radiation. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 75–78, August, 2006.