| Abstract: | ![]()
Results are presented for experimental studies of the static current-voltage characteristics of tunneling MIS diodes based on n-type gallium arsenide. It is shown that the forward branch of the current-voltage characteristics can be used to determine the dependence of the surface potential at the dielectric-semiconductor interface on the voltage and the distribution of the surface state density over energy in the forbidden band. The results of studies of these dependences for diodes prepared by thermal annealing at various temperatures are given. The possible causes of changes in the forward and reverse current, and the dependence of the surface potential on the voltage and distribution of surface state density in energy under the action on the diodes of a gaseous mixture containing hydrogen are analyzed. V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 69–83, January, 1998. |
