Thermopower of doped and damaged NbSe3 |
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| Authors: | P.M. Chaikin W.W. Fuller R. Lacoe J.F. Kwak R.L. Greene J.C. Eckert N.P. Ong |
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| Affiliation: | Department of Physics, University of California Los Angeles, CA 90024, U.S.A.;IBM Research Labs San Jose, USA;Department of Physics, University of Southern California Los Angeles, CA 9007, U.S.A. |
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| Abstract: | We have measured the thermoelectric power of pure NbSe3 as well as samples which have been substitutionally doped with isoelectronic Ta and the charged impurity Ti and separate samples which have been radiation damaged by 2.5 MeV protons. We find that 5% Ta doping supresses the lower temperature charge density wave transition. In contrast, the radiation damaged samples and 0.1% Ti samples with larger residual resistivities then the Ta doped samples retain the CDW transitions. A discussion is given of the difference between doping and radiation damage. |
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