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| 透明导电薄膜与p-Si:H膜接触特性的研究 | |
| 引用本文： | 吴芳,王海燕,卢景霄,郜小勇,杨仕娥,陈永生,杨根,王子健. 透明导电薄膜与p-Si:H膜接触特性的研究[J]. 人工晶体学报, 2007, 36(1): 42-46 |
| 作者姓名： | 吴芳 王海燕 卢景霄 郜小勇 杨仕娥 陈永生 杨根 王子健 |
| 作者单位： | 郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052 |
| 摘 要： | 本实验采用PECVD方法在不同透明导电薄膜上沉积了p型掺杂(p-Si:H)膜.用拉曼(Raman)光谱测试了p-Si:H膜的晶化率,并用扫描电子显微镜(SEM)观察了其形貌.结果表明:在SnO2上沉积的p-Si:H膜的晶化率较其它两种衬底高,相应的SEM形貌显示颗粒尺寸也较大.通过I-V测试仪测试了ZnO:Al/p-Si:H、SnO2/p-Si:H和SnO2/ZnO:Al/p-Si:H的接触特性,结果显示ZnO:Al/p-Si:H的接触特性并不比SnO2/p-Si:H差. |
| 关 键 词： | 透明导电膜 p-Si:H膜 I-V测试 电接触特性 晶化率 |
| 文章编号： | 1000-985X（2007）01-0042-05 |
| 修稿时间： | 2006-06-28 |
Study on the Contact Characteristics of Different Transparent Conductive Films with p-Si:H Films |
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| WU Fang,WANG Hai-yan,LU Jing-xiao,GAO Xiao-yong,YANG Shi-e,CHEN Yongs-heng,YANG Gen,WANG Zi-jian. Study on the Contact Characteristics of Different Transparent Conductive Films with p-Si:H Films[J]. Journal of Synthetic Crystals, 2007, 36(1): 42-46 | |
| Authors: | WU Fang WANG Hai-yan LU Jing-xiao GAO Xiao-yong YANG Shi-e CHEN Yongs-heng YANG Gen WANG Zi-jian |
| Affiliation: | Key laboratory of Material Physics, Ministry of Education, College of Physical Engineering, Zhengzhou University, Zhengzhou 450052, China |
| Abstract: | p-Si:H films were deposited on different transparent conductive films by PECVD in this paper.Crystalline volume fraction of p-Si:H films were tested by Raman spectra instrument and the morphology of p-Si:H films were observed by SEM.It was shown that the crystalline volume fraction of p-Si:H films on SnO2 is higher than those on ZnO:Al and SnO2/ZnO:Al,and the cluster size of p-Si:H films on SnO2 is also larger.Contact characteristics of ZnO:Al/p-Si:H,SnO2/p-Si:H and SnO2/ZnO:Al/p-Si:H were tested by I-V testing instrument.It was shown that contact characteristics of SnO2/p-Si:H is not superior to ZnO:Al/p-Si:H and SnO2/ZnO:Al/p-Si:H. |
| Keywords: | transparent conductive films p-Si:H films I-V testing contact characteristics crystalline volume fraction |
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