| n-Ge常温反常Hall效应机理实验 |
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| 引用本文： | 邢旭.n-Ge常温反常Hall效应机理实验[J].物理学报,1990,39(4):614-619. |
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| 作者姓名： | 邢旭 |
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| 作者单位： | 东北师范大学物理系,长春,130024 |
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| 摘 要： | 自常温反常电磁特性发现以来,人们用反型层模型对常温反常Hall效应进行了成功的理论探讨,但至今这种模型还未得到实验的验证。本文将报道我们在这方面的工作。
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EXPERIMENTAL INVESTIGATION MECHANISM ANOMALOUS HALL EFFECT OF n-Ge ABOVE ROOM TEMPERATURE |
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| XING XU.EXPERIMENTAL INVESTIGATION MECHANISM ANOMALOUS HALL EFFECT OF n-Ge ABOVE ROOM TEMPERATURE[J].Acta Physica Sinica,1990,39(4):614-619. |
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| Authors: | XING XU |
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| Abstract: | Since the discovery of specific anomalous electromagnetic character of n-Ge above room temperature, the inversion layer model has been very successful in theoretical investigation of anomalous Hall effect. However, up to now this model has not been verified experimentally. This paper reports this aspect of work. |
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