Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3 μm |
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Authors: | W Rudno-Rudziński K Ryczko J Misiewicz AA Quivy |
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Institution: | a Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland b Instituto de Fisica, Universidade de Sao Paulo, 05315-970 Sao Paulo, Brazil |
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Abstract: | Photoreflectance and photoluminescence measurements were performed on the ensemble of self assembled InAs/GaAs quantum dots designed to emit at 1.3 μm. As many as six QDs-related optical transitions were observed in PR spectra, the energies of which were confirmed by high-excitation PL results. Numerical calculations allowed estimating the average size of the dots, which is larger than for standard InAs/GaAs QDs. This result is in agreement with structural data. Additionally, the energy level structure for such QDs was derived and compared with the electronic structure of standard InAs/GaAs dots. It was shown that the energy level structure of such large dots qualifies them for the active region of a laser emitting at 1.3 μm. |
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Keywords: | 78 66 &minus w 78 55 &minus m |
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