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Magnetoelectric behavior of ferrimagnetic BixCo2−xMnO4 (x=0, 0.1 and 0.3) thin films |
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| Authors: | N.E. Rajeevan Ravi KumarD.K. Shukla R.J. ChoudharyP. Thakur A.K. SinghS. Patnaik S.K. AroraI.V. Shvets P.P. Pradyumnan |
| Affiliation: | a Department of Physics, Z.G. College/University of Calicut, Kerala 673 014, India b Centre for Materials Science and Engineering, NIT, Hamirpur (HP) 177005, India c Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, Hamburg 22603, Germany d UGC DAE Consortium for Scientific Research, Indore 452 057, India e European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France f School of Physical Sciences, JNU, New Delhi 110 067, India g CRANN, School of Physics, Trinity College, Dublin 2, Ireland h Department of Physics, University of Calicut, Kerala 673 635, India |
| Abstract: | Thin films of BixCo2−xMnO4 (x=0, 0.1 and 0.3) were grown on quartz, LaAlO3 (LAO) and YBa2Cu3O7 (YBCO) buffer layer coated LAO substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) and Raman scattering measurements showed that the thin films exhibit single phase polycrystalline cubic spinel structure on all the substrates. Near edge X-ray absorption fine structure (NEXAFS) studies confirmed the octahedral occupancy of the substituted Bi3+ ions. Temperature dependent zero-field cooled (ZFC) magnetization measurements show the ferrimagnetic (FM) behavior (TC∼186 K) and magnetization undergoes a crossover from positive to negative, owing to the opposite contributions of magnetic moments from Co and Mn ions. A weak ferroelectric property exhibited by the films above room temperature was evidenced through the capacitance-voltage (C-V) and dielectric measurements. Magnetoelectric coupling was found to be maximum just below FM-TC. |
| Keywords: | Magnetoelectric Ferroelectric Ferrimagnetic Raman scattering NEXAFS |
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