EPR g factors and tetragonal distortion for the isoelectronic Ni and Cu centers in the CuGaSe2 crystal |
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Authors: | W.L. Feng X.M. Li W.C. Zheng Y.G. YangW.Q. Yang |
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Affiliation: | a Key Laboratory for Optoelectronic Technology and Systems, Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China b Department of Material Science, Sichuan University, Chengdu 610064, China c Department of Applied Physics, Chongqing University of Technology, Chongqing 400054, China d Department of Optics and Electronics, Chengdu University of Information and Technology, Chengdu 610225, China e International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China |
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Abstract: | The EPR g factors, g|| and g⊥, for the isoelectronic 3d9 ions Ni+ and Cu2+ at the tetragonal Cu+ site of the CuGaSe2 crystal are calculated from the high-order perturbation formulas based on a two-spin-orbit-parameter model. In the model, both the contributions to g factors from the spin-orbit parameter of central 3d9 ion and that of ligand ion are contained. The calculated results appear to be consistent with the experimental values. The tetragonal distortions (characterized by θ−θ0, where θ is the angle between the metal-ligand bond and C4 axis, and θ0≈54.74° is the same angle in cubic symmetry) of Ni+ and Cu2+ centers, which are different from the corresponding angle in the host CuGaSe2 crystal and from impurity to impurity, are obtained from the calculations. The difference of the sign of g||−g⊥ between the isoelectronic Ni+ and Cu2+ centers is found to be due to the different tetragonal distortions of both centers in the CuGaSe2 crystal. |
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Keywords: | Electron paramagnetic resonance Crystal- and ligand-field theory Defect structure Ni+ Cu2+ CuGaSe2 |
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