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Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact |
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| Authors: | Masahide Tona Hirofumi Watanabe Satoshi Takahashi Nobuo Yoshiyasu Toshifumi Terui Chikashi Yamada |
| Institution: | a Institute for Laser Science and Department of Applied Physics and Chemistry, University of Electro-Communications, Chofu, Tokyo 182-8585, Japan b Japan Science and Technology Agency, Chofu, Tokyo 182-8585, Japan c Department of Physics, Kobe University, Kobe, Hyogo 657-8501, Japan d National Institute of Information and Communications Technology, Iwaoka, Kobe 651-2492, Japan |
| Abstract: | Using scanning tunneling microscopy (STM) and time of flight secondary ion mass spectrometry (TOF/SIMS), we observed radiation effects on a Si(1 1 1)-(7 × 7) surface in the collision of a single highly charged ion (HCI) with a charge state q up to q = 50. The STM observation with atomic resolution revealed that a nanometer sized crater-like structure was created by a single HCI impact, where the size increased rapidly with q. The secondary ion yields also increased with q in which multiply charged Si ions (Sin+) were clearly observed in higher q HCI-collisions. The sputtering mechanism is briefly discussed, based on the so-called Coulomb explosion model. |
| Keywords: | Highly charged ion (HCI) Si(1 1 1)-(7 × 7) surface Scanning tunneling microscope (STM) Time of flight secondary ion mass spectrometry (TOF/SIMS) |
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