| 手性碳纳米管能带特性的研究 |
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| 引用本文： | 张振华,彭景翠,陈小华,张华. 手性碳纳米管能带特性的研究[J]. 化学物理学报(中文版), 2001, 14(2): 198-204. DOI: 10.1088/1674-0068/14/2/198-204 |
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| 作者姓名： | 张振华 彭景翠 陈小华 张华 |
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| 作者单位： | 湖南大学应用物理系;长沙交通学院信息与计算科学系;湖南大学应用物理系,;长沙交通学院信息与计算科学系, |
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| 摘 要： | 探讨手性（chiral）单层碳纳米管（SWNTs）电子结构的主要特点。提出了确定与Fermi能级EF=0相交或相近的子能带指数J及相关的波矢ky值的方法。并直接从A-B效应出发,导出了任意手性角的SWNTs在磁场中发生金属—半导体连续转换的条件,同时对其能隙变化规律进行了详细讨论。
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| 关 键 词： | 手性碳纳米管 电子结构 能隙 |
Energy Band Properties of the Chiral Carbon Nanotubes |
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| Zhang Zhenhua,Peng Jingcui,Chen Xiaohua,Zhang Hua. Energy Band Properties of the Chiral Carbon Nanotubes[J]. Chinese Journal of Chemical Physics, 2001, 14(2): 198-204. DOI: 10.1088/1674-0068/14/2/198-204 |
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| Authors: | Zhang Zhenhua Peng Jingcui Chen Xiaohua Zhang Hua |
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| Abstract: | The principal properties of electronic energy band structure for the chiral single-walled carbon nanotube (SWNTs) were investigated. Methods to decide the subband index crossing or approaching the Fermi level and decided the related wave vector ky are developed. Starting from the A-B effect, the conditions of metal-semiconductor transition continuously for the chiral SWNTs under inducing by the magnetic field are deduced and the general change pattern of energy gap is discussed in detail. |
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| Keywords: | Chiral carbon nanotube Electronic structure Energy gap |
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