Study of the Phase Transformation of Single Particles of Ga2O3 by UV‐Raman Spectroscopy and High‐Resolution TEM

By taking advantage of UV‐Raman spectroscopy and high‐resolution TEM (HRTEM), combined with the focused ion beam (FIB) technique, the transformation from GaOOH into α‐Ga₂O₃ and then into β‐Ga₂O₃ was followed. We found that the stepwise transformations took place from the surface region before developing into the bulk of single particles without particle agglomeration and growth. During the transformation from GaOOH into α‐Ga₂O₃, the elimination of water vapor through the dehydroxylation of GaOOH resulted in the formation of micropores in the single particles, whilst maintaining their particle size. For the phase transformation from α‐Ga₂O₃ into β‐Ga₂O₃, the nucleation of β‐Ga₂O₃ was found to occur at the surface defects and this process could be retarded by occupying these defects with a small amount of La₂O₃. By finely controlling the process of the phase transformation, the β‐Ga₂O₃ domains gradually developed from the surface into the bulk of the single particles without particle agglomeration. Therefore, the surface structure of the α‐Ga₂O₃ single particles can be easily tuned and a particle with an α@β core–shell phase structure has been obtained.