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Deformation potential constants of the ground state of boron acceptors in silicon
Affiliation:1. SUPA, Department of Biomedical Engineering, University of Strathclyde, Glasgow G1 1QE, United Kingdom;2. SUPA, Institute for Gravitational Research, University of Glasgow, Glasgow G12 8QQ, United Kingdom;3. Département de Physique, Université de Montréal, Montréal, QC H3T 1J4, Canada;4. GOOCH & HOUSEGO PLC, Dowlish Ford, Ilminster TA19 0PF, United Kingdom
Abstract:The shear deformation potential constants of the ground state of boron acceptors in silicon have been determined from the piezospectroscopy of the 2p′ line; they are b′ = -(1.61 ± 0.07) eV and d′ = -(4.50 ± 0.15) eV.
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