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Metal contact induced crystallization in films of amorphous silicon and germanium
Affiliation:1. Max Planck Institute for Intelligent Systems (formerly Max Planck Institute for Metals Research), Heisenbergstrasse 3, D-70569 Stuttgart, Germany;2. School of Materials Science and Engineering, Tianjin University, Tianjin 300350, China;3. Institute for Materials Science, University of Stuttgart, Heisenbergstrasse 3, D-70569 Stuttgart, Germany;1. University of Warsaw, Faculty of Physics, Pasteura 5 str., Warsaw 02-093, Poland;2. UTP University of Science and Technology, Institute of Mathematics and Physics, Kaliskiego 7 str., Bydgoszcz 85-796, Poland;3. University of Warsaw, Department of Chemistry, Pasteura 1 str., Warsaw 02-093, Poland
Abstract:The crystallization and compound formation temperature of vacuum deposited amorphous Si (and Ge) while in contact with various crystalline metals as a thin film sandwich are investigated by electron microscopy and electron diffraction. The results show that in simple eutectic systems the Si crystallizes at 0.72 (and Ge at approximately 0.65) of the eutectic temperature expressed in degrees Kelvin. Compounds are formed generally by the more rapid diffusion of Si into the metal.
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