| 用四探针技术测量半导体薄层电阻的新方案 |
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| 引用本文： | 宿昌厚.用四探针技术测量半导体薄层电阻的新方案[J].物理学报,1979,28(6):759-772. |
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| 作者姓名： | 宿昌厚 |
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| 摘 要： | 本文介绍用四探针技术测量半导体薄层电阻的新方案。其特点是,不论对无穷大薄层还是有限尺寸小样品,都不要求探针之间的距离相等,测量结果与探针间距无关,消除了针距不等引起的误差;同时,对于矩形或圆形小样品,不需要另加边界修正,因而也不必知道样品几何尺寸,只从电测量中即可求出电阻值。
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| 收稿时间： | 8/8/1978 12:00:00 AM |
A NEW MODE OF FOUR-POINT PROBE TECHNIQUE FOR THE MEASUREMENT OF SEMICONDUCTOR SHEET RESISTANCE |
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| SU CHANG-HOU.A NEW MODE OF FOUR-POINT PROBE TECHNIQUE FOR THE MEASUREMENT OF SEMICONDUCTOR SHEET RESISTANCE[J].Acta Physica Sinica,1979,28(6):759-772. |
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| Authors: | SU CHANG-HOU |
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| Abstract: | A new method for measuring sheet resistance of semiconductor using four-point probe has been developed. Its characteristies are as follows, (a) the distances between probes can be unequal for the large thin slices as well as for the samples with finite extent. The result obtained does not depend on the probe spacings. Errors due to unequal probe spacings are eliminated; (b) it is not neccesaxy to take into account the geometry corrections for the rectangular and circular small specimens. The knowledge of its dimensions, so that, is needless. The value of the resistance can be determined from electrical measurement only. |
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