Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method |
| |
Authors: | Du Gang Liu Xiao-Yan Xia Zhi-Liang Yang Jing-Feng and Han Ru-Qi |
| |
Institution: | Institute of Microelectronics, Peking University, Beijing 100871, China |
| |
Abstract: | Interface roughness strongly influences the performance
of germanium metal--organic--semiconductor field effect transistors
(MOSFETs). In this paper, a 2D full-band Monte Carlo simulator is
used to study the impact of interface roughness scattering on
electron and hole transport properties in long- and short- channel
Ge MOSFETs inversion layers. The carrier effective mobility in the
channel of Ge MOSFETs and the in non-equilibrium transport
properties are investigated. Results show that both electron and
hole mobility are strongly influenced by interface roughness
scattering. The output curves for 50~nm channel-length double gate n
and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs
have significant improvement compared with that of Si n- and
p-MOSFETs with smooth interface between channel and gate dielectric.
The $82\%$ and $96\%$ drive current enhancement are obtained for the
n- and p-MOSFETs with the completely smooth interface. However, the
enhancement decreases sharply with the increase of interface
roughness. With the very rough interface, the drive currents of Ge
MOSFETs are even less than that of Si MOSFETs. Moreover, the
significant velocity overshoot also has been found in Ge MOSFETs. |
| |
Keywords: | carrier transport interface scattering germanium
MOSFETs Monte Carlo |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|