Solid solubility of Ge,Si, and Mg in Fe2O3 and photoelectric behavior

Solid solutions of GeO₂ in Fe₂O₃ were prepared by mechanically mixing the solids and firing at 1000°C in air, and from a gel obtained by the addition of an alcohol solution of germanium ethoxide to iron dissolved in HNO₃. The dried gel was then heated at 1000°C. The solubility limit is 5 mole% GeO₂, Fe_1.95Ge_0.05O₃. Similar procedures were used to prepare solid solutions with Si and the solubility limit is greater than 4 mole% SiO₂. Firing of mixtures or gels of Fe₂O₃ containing Mg produces a spinel phase even at the lowest detectable concentrations. The resistivity of pressed pellets of Fe_2?xGe_xO₃ varies from about 10⁶ ohm-cm for x = 0 to about 10^?1 ohm-cm for x = 0.05. The photoassisted electrolysis of water at Ge-doped Fe₂O₃ electrodes is demonstrated. The $\text{Fe}{}_2\text{O}{}_3\text{(Ge)}\text{0.7 M}\text{Fe(CN)}{}^{\mathrm{4?}}{}_6\text{,}\text{0.05 M}\text{Fe(CN)}{}^{\mathrm{3?}}{}_6\text{Pt}$ photoelectrochemical cell showed a 0.29-V open-circuit voltage, 1.2-mA/cm² short-circuit current, 0.31 fill factor, and 0.06% power efficiency.