|
|||||
|
|
Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells |
|
| Authors: | M Yu Melnikov A A Shashkin V T Dolgopolov S V Kravchenko S -H Huang C W Liu |
| Institution: | 1. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia 2. Physics Department, Northeastern University, Boston, Massachusetts, 02115, USA 3. Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, 106, Taipei, Republic of China 4. National Nano Device Laboratories, 300, Hsinchu, Republic of China |
| Abstract: | The effective mass m* of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n s , the effective mass has been found to grow with decreasing n s , obeying the relation m*/m b = n s /(n s ? n c ), where m b is the electron band mass and n c ≈ 0.54 × 1011 cm?2. In samples with maximum mobilities ranging between 90 and 220 m2/(V s), the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |